Atomic Layer Deposition of Boron‐Doped Al₂O₃ Dielectric Films

This paper presents preparation of boron-doped Al2O3 thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures 160–300 °C are studied, giving a maximum growth per cycle (GPC) 0.77 Å at 200 °C. Field emission scanning electron microscopy (FESEM) force (AFM) used to study the surface morphology roughness films. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), Time-of-flight elastic recoil detection analysis (ToF-ERDA), X-ray photoelectron (XPS) composition An annealing process is carried out 450 for 1 h investigate its effect on elemental electrical properties The 70 nm thick film deposited has boron content 3.7 at.% with low leakage current density (10−9 10−6 A cm−2) when thickness nm. dielectric constant this doped 5.18.